Data di Pubblicazione:
2016
Abstract:
Ambipolar transistors typically suffer from large off-current inherently due to ambipolar conduction. Using a tri-gate transistor it is shown that it is possible to electrostatically switch ambipolar polymer transistors from ambipolar to unipolar mode. In unipolar mode, symmetric characteristics with an on/off current ratio of larger than 10^5 are obtained. This enables easy integration into low-power complementary logic and volatile electronic memories.
Tipologia CRIS:
1.1 Articolo in rivista
Keywords:
ambipolar semiconductors; complementary electronics, electronic memory; polymer transistors; Materials Science (all); Mechanics of Materials; Mechanical Engineering
Elenco autori:
Torricelli, Fabrizio; Ghittorelli, Matteo; Smits, Edsger C. P.; Roelofs, Christian W. S.; Janssen, René A. J.; Gelinck, Gerwin H.; KOVACS VAJNA, Zsolt Miklos; Cantatore, Eugenio
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