Single-transistor method for the extraction of the contact and channel resistances in organic field-effect transistors

A simple and accurate method for the extraction of the contact and channel resistances in organic field-effect transistors (OFETs) is proposed. The method is of general applicability since only two measured output-characteristics of a single OFET are needed and no channel-length scaling is required. The effectiveness of the method is demonstrated by means of both numerical simulations and experimental data of OFETs. Furthermore, the provided analysis quantitatively shows that the contact resistance in OFETs depends on both V G and VD, and, in the case of non-linear injecting contact, the drain-source voltage (viz., the electric field along the channel transport direction) plays a major role.