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Highly sensitive and selective NO2 chemical sensors based on Al doped NiO thin films

Academic Article
Publication Date:
2020
Abstract:
Al-doped Nickel oxide (Al:NiO) nanostructured thin films, prepared by RF sputtering technique, were tested for NO2 gas detection. The films were deposited on alumina substrates with thicknesses ranging between 52 nm and 167 nm, while the at.% of Al was varied from 5.0% to 6.7%. The effect of the thickness on the morphological, structural and optical properties was investigated. Moreover, the sensing characteristics were examined and optimized with respect to film thickness and operating temperature (200 °C and 300 °C), at NO2 concentrations ranging from 200 ppb to 2500 ppb and in presence of a constant relative humidity (RH) of 40%. An ultimate response of 271% towards a NO2 concentration of 200 ppb at 200 °C was obtained, concluding that Al:NiO can be potentially used as a sensing material for this specific gas.
CRIS type:
1.1 Articolo in rivista
Keywords:
Gas sensing; Nickel oxide; NO; 2; p-type semiconductors; RF sputtering; Thin films
List of contributors:
Kampitakis, V.; Gagaoudakis, E.; Zappa, D.; Comini, E.; Aperathitis, E.; Kostopoulos, A.; Kiriakidis, G.; Binas, V.
Authors of the University:
COMINI Elisabetta
Matter Physics
ZAPPA Dario
Handle:
https://iris.unibs.it/handle/11379/529695
Published in:
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
Journal
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