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SOLID-STATE ELECTRONICS
Rivista
Codice:
E156883
ISSN:
0038-1101
Dati Generali
Dati Generali
Pubblicazioni (10)
A new analytical model for amorphous-silicon thin-film transistors including tail and deep states
Articolo
A unified core model of double-gate and surrounding-gate MOSFETs for circuit simulation
Articolo
Accurate analytical approximation of the OTFTs surface potential by means of the Lagrange Reversion Theorem
Articolo
Analysis of electrical characteristics of polycrystalline silicon thin-film transistors under static and dynamic conditions
Articolo
Analytical approximation of the InGaZnO thin-film transistors surface potential
Articolo
Charge-based MOSFET model based on the Hermite interpolation polynomial
Articolo
Large-scale CMOS-compatible process for silicon nanowires growth and BC8 phase formation
Articolo
Memory Properties of Cdse Single-crystals
Articolo
Numerical Analysis of Poly-TFTs Under Off-Conditions
Articolo
Organic Thin Film Transistors: a DC/Dynamic model for Circuit Simulation
Articolo
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